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Quantum dot laser emits twin peaks Emitting at 1543 and 1571 nm simultaneously, the InAs-on-InP device looks like the first dual-wavelength self-modelocked source. Bastani quits Anadigics after PA pullback The popularity of the company's GaAs BiFETs for 3G handsets has been a mixed blessing, with its 10-year veteran CEO departing as it counts the cost of failing to meet demand in 2007. Inverted metamorphic cell claims solar crown Because they use GaAs instead of germanium substrates, NREL scientists can readily exploit the ideal combination of materials to produce a compound semiconductor cell. Cree's lighting strategy brings dazzling sales The LED maker’s vertical integration pays off at the packaged chip level, but at the price of reduced annual profits. Showa Denko delays AlGaInP LED expansion The chemicals-and-electronics group is shelving its $10 million investment because of slower growth in demand for LCD backlighting. MIT nears logic goal with transistor record Reducing the gate length of PHEMTs with an InAs channel helps set the frequency standard in research part-funded by Intel. Emcore confident despite solar curveball Doubts over cell customer Green and Gold Energy hit Emcore's solar business, but with plenty more customers in the pipeline CEO Hong Hou aims for an initial public offering in 2009. Sales dip shocks Anadigics into fab U-turn Efforts to accelerate the development of the company’s Asian operation to increase output prove unnecessary, as cellphone customers turn to PA makers more capable of meeting their demands. Silicon players come to Aixtron for LED entry Despite economic worries, yet more firms are looking to make compound semiconductor chips for display backlighting, says the epitaxy equipment manufacturer. BMW deal underlines IPG's processing power Increasing sales and an order for 63 kW of GaAs-based fiber-lasers to weld car doors demonstrate growing confidence in the effectiveness of laser manufacturing tools.

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