Skip to content

Journal of Physics D

Home arrow IOP - Journals arrow Journal of Physics D


Journal of Physics D
One of the world's most important journals in the field, Journal of Physics D: Applied Physics is concerned with all aspects of applied physics research, from magnetism, plasmas and semiconductors to the structure and properties of matter. The journal's coverage is deliberately broad and publishes theoretical, computational and experimental studies.

Journal of Physics D: Applied Physics
  • Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system
    Author(s): Frantisek Fendrych, Andrew Taylor, Ladislav Peksa, Irena Kratochvilova, Jan Vlcek, Vladimira Rezacova, Vaclav Petrak, Zdenek Kluiber, Ladislav Fekete, Michael Liehr and Milos Nesladek
    Affiliation(s): Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8, Czech Republic; Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6, Czech Republic; Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2, Czech Republic; Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden, Germany; IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek, Belgium

  • A critical review of growth of low-dimensional carbon nanostructures on SiC (0 0 0 1): impact of growth environment
    Author(s): Weijie Lu, John J Boeckl and William C Mitchel
    Affiliation(s): Department of Chemistry, and Center for Physics and Chemistry of Materials, Fisk University, Nashville, TN 37208, USA; Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright Patterson AFB, OH 45433, USA

  • Carbon-based nanoscience and nanotechnology: where are we, where are we heading?
    Author(s): Patrick G Soukiassian and M S Ramachandra Rao
    Affiliation(s): Commissariat a l'Energie Atomique et aux Energies Alternatives, Saclay, Gif-sur-Yvette, France; Universite de Paris-Sud, Orsay, France; Department of Physics and Nano Functional Materials Technology Centre, Indian Institute of Technology (IIT) Madras, Chennai, India

  • A roadmap to high quality chemically prepared graphene
    Author(s): Regis Y N Gengler, Konstantinos Spyrou and Petra Rudolf
    Affiliation(s): Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747AG Groningen, The Netherlands

  • Epitaxial few-layer graphene: towards single crystal growth
    Author(s): H Hibino, H Kageshima and M Nagase
    Affiliation(s): NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

  • Large homogeneous mono-/bi-layer graphene on 6H–SiC(0 0 0 1) and buffer layer elimination
    Author(s): C Virojanadara, R Yakimova, A A Zakharov and L I Johansson
    Affiliation(s): Department of Physics, Chemistry and Biology, Linkoping University, S-581 83, Linkoping, Sweden; Maxlab, Lund University, S-22100, Lund, Sweden

  • Epitaxial graphene on silicon substrates
    Author(s): M Suemitsu and H Fukidome
    Affiliation(s): Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Agency, Chiyoda, Tokyo 107-0075, Japan

  • Diamond growth by chemical vapour deposition
    Author(s): J J Gracio, Q H Fan and J C Madaleno
    Affiliation(s): Nanotechnology Research Division (NRD), Centre for Mechanical Technology and Automation, University of Aveiro, 3810-193, Aveiro, Portugal

  • Epitaxial graphene electronic structure and transport
    Author(s): Walt A de Heer, Claire Berger, Xiaosong Wu, Mike Sprinkle, Yike Hu, Ming Ruan, Joseph A Stroscio, Phillip N First, Robert Haddon, Benjamin Piot, Clement Faugeras, Marek Potemski and Jeong-Sun Moon
    Affiliation(s): School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA; Institut Neel - CNRS, Grenoble, 38042 Cedex 9, France; Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899, USA; Center for Nanoscale Science and Engineering, Departments of Chemistry and Chemical and Environmental Engineering, University of California, Riverside, CA 92521, USA; LNCMI -CNRS, Grenoble, 38042 Cedex 9, France; HRL Laboratories LLC, Malibu, CA 90265, USA

  • Nanodiamonds for optical bioimaging
    Author(s): Yuen Yung Hui, Chia-Liang Cheng and Huan-Cheng Chang
    Affiliation(s): Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan, Republic of China; Department of Physics, National Dong-Hwa University, Hualien 97401, Taiwan, Republic of China

  • The fascinating physics of carbon surfaces: first-principles study of hydrogen on C(0 0 1), C(1 1 1) and graphene
    Author(s): Margherita Marsili and Olivia Pulci
    Affiliation(s): Dipartimento di Fisica dell'Universita di Roma Tor Vergata, CNR-INFM, NAST, Via della Ricerca Scientifica 1, I-00133 Roma, Italy; European Theoretical Spectroscopy Facility (ETSF)

  • Granular superconductivity in metallic and insulating nanocrystalline boron-doped diamond thin films
    Author(s): B L Willems, G Zhang, J Vanacken, V V Moshchalkov, S D Janssens, K Haenen and P Wagner
    Affiliation(s): INPAC-Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200-D, 3000-Leuven, Belgium; Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, PO 14-0149, Lima-14, Peru; Institute for Materials Research (IMO), Hasselt University, BE-3590 Diepenbeek, Belgium; Division IMOMEC, IMEC vzw, Wetenschapspark 1, BE-3590 Diepenbeek, Belgium

  • Realistic calculations of carbon-based disordered systems
    Author(s): A R Rocha, Mariana Rossi, Antonio J R da Silva and A Fazzio
    Affiliation(s): Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC Santo Andre, SP, Brazil; Instituto de Fisica, Universidade de Sao Paulo, CP 66318, 05315-970, Sao Paulo, SP, Brazil; Laboratorio Nacional de Luz Sincrotron, Campinas, Sao Paulo, Brazil

  • Anodic bonded graphene
    Author(s): Adrian Balan, Rakesh Kumar, Mohamed Boukhicha, Olivier Beyssac, Jean-Claude Bouillard, Dario Taverna, William Sacks, Massimiliano Marangolo, Emanuelle Lacaze, Roger Gohler, Walter Escoffier, Jean-Marie Poumirol and Abhay Shukla
    Affiliation(s): Universite Pierre et Marie Curie-Paris 6, CNRS-UMR7590, Institut de Mineralogie et de Physique des Milieux Condenses, 140 rue de Lourmel, Paris, F-75015 France; Universite Pierre et Marie Curie-Paris 6, CNRS-UMR7588, Institut des Nanosciences de Paris, 140 rue de Lourmel, Paris, F-75015 France; Laboratoire National des Champs Magnetiques Intenses, INSA UPS CNRS, UPR 3228, Universite de Toulouse, 143 avenue de Rangueil, 31400 Toulouse, France

  • Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET
    Author(s): Yoshinori Sasaki and Hiroshi Kawarada
    Affiliation(s): School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

  • Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates
    Author(s): Nicolas Camara, Antoine Tiberj, Benoit Jouault, Alessandra Caboni, Bilal Jabakhanji, Narcis Mestres, Philippe Godignon and Jean Camassel
    Affiliation(s): IMB-CNM-CSIC, Campus UAB 08193-Bellaterra, Barcelona, Spain; GES, UMR-CNRS 5650, Universite Montpellier 2, 34095-Montpellier cedex 5, France; ICMAB-CSIC, Campus UAB 08193- Bellaterra, Barcelona, Spain

  • Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation
    Author(s): C Riedl, C Coletti and U Starke
    Affiliation(s): Max-Planck-Institut fur Festkorperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany

  • Interface structure of graphene on SiC: an ab initio and STM approach
    Author(s): J-Y Veuillen, F Hiebel, L Magaud, P Mallet and F Varchon
    Affiliation(s): Institut Neel, CNRS-UJF, Boite Postale 166, 38042 Grenoble, France; European Theoretical Spectroscopy Facility, Unite PCPM, Universite catholique de Louvain, Place Croix du Sud 1, 1348 Louvain-la-Neuve, Belgium

  • Recent progress in the preparation and application of carbon nanocapsules
    Author(s): Kuo Chu Hwang
    Affiliation(s): Department of Chemistry, National Tsing Hua University, Hsinchu, Taiwan

  • 'Graphene-on-insulator' fabricated on atomically controlled solid surfaces
    Author(s): T Tsukamoto and T Ogino
    Affiliation(s): Department of Electrical and Computer Engineering, Yokohama National University, 79-5, Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan

  • Induced and intrinsic superconductivity in carbon nanotubes
    Author(s): M Ferrier, A Kasumov, R Deblock, S Gueron and H Bouchiat
    Affiliation(s): Univ. Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France

  • Multilayer epitaxial graphene grown on the surface; structure and electronic properties
    Author(s): M Sprinkle, J Hicks, A Tejeda, A Taleb-Ibrahimi, P Le Fevre, F Bertran, H Tinkey, M C Clark, P Soukiassian, D Martinotti, J Hass and E H Conrad
    Affiliation(s): The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA; Institut Jean Lamour, CNRS - Univ. de Nancy - UPV-Metz, 54506 Vandoeuvre les Nancy, France; Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France; UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France; Commissariat a l'Energie Atomique, SIMA, DSM-IRAMIS-SPCSI, Saclay, 91191 Gif sur Yvette, France; Dept. de Physique, Univ. de Paris-Sud, 91405 Orsay, France